All the above-mentioned devices are based on p-type conductivity.
2.
Stochoimetric Ag 2 Te has n-type conductivity.
3.
This creates more CdF 2 molecules and releases electrons which are weakly bonded to trivalent dopant ions resulting in n-type conductivity and a hydrogenic donor level.
4.
It showed a mobility below 500 cm 2 V " 1 s " 1 for p-type conductivity at room temperature, about half that of a silicon FET but a low on / off current ratio because the device was realised on the surface of a bulk crystal.
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